BEGIN:VCALENDAR
VERSION:2.0
PRODID:Icfo
X-PUBLISHED-TTL:P1W
BEGIN:VEVENT
UID:69d5d8876dd43
DTSTART:20240208T110000Z
SEQUENCE:0
TRANSP:OPAQUE
DTEND:20240208T120000Z
LOCATION:Seminar Room
SUMMARY:ICFO | ROMAIN MAURAND
CLASS:PUBLIC
DESCRIPTION:Semiconductor spin qubits based on spin-orbit states stand as p
 romising candidates for quantum information processing. In particular\, ow
 ing to the spin-orbit interaction (SOI) of valence states\, hole spins in 
 silicon and germanium are responsive to electric field excitations [1\,2]\
 , allowing for practical and fast qubit control. This spin-electric respon
 se is intimately link to the complex and rich spin-orbit physics. Here I w
 ill report on our last efforts leveraging spin-orbit interaction of hole s
 pin in silicon devices produced on a semi-industrial 300mm CMOS foundry [3
 ]. First\, I will demonstrate how SOI turns into an asset to engineer mixe
 d spin-charge states in a double quantum dot able to couple strongly with 
 microwave photons. In an hybrid spin cQED platform we reveal a hole spin-p
 hoton coupling of 300 MHz largely exceeding the combined spin-photon decoh
 erence rate leading to a cooperativity above 103 [4]. This coupling exceed
 s the best figures reported so far for electrons in silicon [5\,6] and ope
 ns the cQED quantum tool box to spin-orbit qubits. Secondly\, due to their
  spin-electric susceptibility\, spin-orbit qubits may be vulnerable to ele
 ctrical noise\, which explains the relatively short coherence time reporte
 d so far. In a second part\, I&rsquo\;ll focus on the existence of prefere
 ntial magnetic field orientation at which a spin-orbit qubit is decoupled 
 from charge noise while keeping its efficient electrical control [7]. To t
 his end\, we experimentally achieve a complete characterization of the hol
 e spin gyromagnetic tensor and its susceptibility to electric fields by co
 herent manipulation techniques. It evidences a strong dependence on the ex
 ternal magnetic field orientation\, and reveal optimal operation points at
  which the longitudinal spin-electric susceptibility is minimal. At these 
 optimal points\, we measure a Hahn-Echo decay time in the order of 100 mic
 roseconds maintaining Rabi frequencies in the MHz range [8]. All together\
 , the coupling to microwave photon and the ability to hide from charge noi
 se make hole spin in silicon an attractive platform to further develop sem
 iconductor spin qubit-based quantum information processing.\nHosted by&nbs
 p\;Prof. Dr. Adrian Bachtold&nbsp\;\n&nbsp\;
DTSTAMP:20260408T042439Z
END:VEVENT
END:VCALENDAR